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− | * Chevillon N., Sallese J.-M. , Lallement C., Prégaldiny F., Madec M., Sedlmeir J. and Aghassi J. | + | * Chevillon N., Sallese J.-M. , Lallement C., Prégaldiny F., Madec M., Sedlmeir J. and Aghassi J. |
+ | ::''Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling'', '''IEEE Transaction on Electron Devices''', vol. 59, N° 1, pages 60-71, 2012 [http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6062403&url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D6062403 Lien] | ||
*HEITZ J., DUMAS N., FRICK V., LALLEMENT C., HÉBRARD L., | *HEITZ J., DUMAS N., FRICK V., LALLEMENT C., HÉBRARD L., |
Version du 1 février 2013 à 19:34
Publications depuis 2000
2013
2012
- Chevillon N., Sallese J.-M. , Lallement C., Prégaldiny F., Madec M., Sedlmeir J. and Aghassi J.
- Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling, IEEE Transaction on Electron Devices, vol. 59, N° 1, pages 60-71, 2012 Lien
- HEITZ J., DUMAS N., FRICK V., LALLEMENT C., HÉBRARD L.,
- Modeling and optimization of a Ker charge pump loaded by a resistive circuit, 19th IEEE International Conference Mixed Design of Integrated Circuits and Systems (MIXDES'2012), Warsaw (Poland), May 24-26, 2012, Proc. pp. 376-381. Lien
- MADEC M., SCHELL J.B., KAMMERER J.B., LALLEMENT C., HÉBRARD L.,
- Compact modeling of vertical Hall-effect devices: Electrical behavior, 10th IEEE International NEWCAS Conference (NEWCAS 2012), Montreal (Canada), June 17-20, 2012, Proc. pp. 213-216. Lien
2011
- Gendrault Y., Madec M., Lallement C., Pêcheux F., Haiech J.,
- Synthetic biology methodology and model refinement based on microelectronic modeling tools and languages” in Biotechnologies Journal, vol. 6, pp. 796-806, 2011. Lien
- Heitz J., Leroy Y., Hebrard L., Lallement C.,
- Theoretical characterization of the topology of connected carbon nanotubes in random networks”, ::Nanotechnology 22, 345703, pages 1-7, 2011. Lien
- Sallese J.-M., Chevillon N., Lallement C., Iñiguez B., Prégaldiny F.
- Charge Based Modelling of Junctionless Double Gate Field-Effect Transistors”, IEEE Transactions on Electron Devices,vol. 58, pages 2628-2637, août 2011.Lien
- Yesayan A., Prégaldiny F., Chevillon N., Lallement C., Sallese J.-M.
- Physics-based compact model for ultra-scaled finFETs, Solid-State Electronics, vol. 62, pages 165-173, août 2011.Lien
2010
2009
2008
2007
- O’Connor I., Liu J., Gaffiot F., Prégaldiny F., Lallement C., Maneux C., Goguet J., Frégonèse S., Zimmer T., Anghel L., Dang T., Leveugle R.,
- CNTFET Modeling and Reconfigurable Logic Circuit Design”, IEEE Transactions on Circuits and Systems - I: Regular papers, vol. 54, n°11, pages 2365 - 2379, novembre 2007. Lien
2006
2005
- Pêcheux F., Lallement C., Vachoux A.
- VHDL-AMS and Verilog-AMS as alternative HDL's for the Efficient Modeling of Multi-disciplines Schemes,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 24, n°2, pages 204-225, février 2005. Lien
- Sallese J.-M., Krummenacher F., Prégaldiny F., Lallement C., Roy A., Enz C.,
- A design oriented current model for DG MOSFET and its correlation with the EKV formalism,” Solid-State Electronics, vol. 49 pages 485-489, mars 2005. Lien
2004
- Prégaldiny F., Lallement C., Mathiot D.,
- Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model”, Solid-State Electronics, vol. 48, n° 5, pages 781-787, mai 2004. Lien
2003
- Prégaldiny F., Lallement C., Mathiot D.,
- A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs,” Solid-State Electronics, vol. 46, pages 2191-2198, décembre 2002. Lien
2002
2001
2000